Recent Progress in Micro‐LED‐Based Display Technologies von Anwar, Abdur Rehman, Sajjad, Muhammad T., Johar, Muhammad Ali, Hernández‐Gutiérrez, Carlos A., Usman, Muhammad, Łepkowski, S. P.

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Third-order elastic constants and biaxial relaxation coefficient in wurtzite group-III nitrides by hybrid-density functional theory calculations von Łepkowski, S P, Anwar, Abdur-Rehman

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Inapplicability of Martin transformation to elastic constants of zinc-blende and wurtzite group-III nitride alloys von Łepkowski, S. P.

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Universal behavior of photoluminescence in GaN-based quantum wells under hydrostatic pressure governed by built-in electric field von Suski, T., Łepkowski, S. P., Staszczak, G., Czernecki, R., Perlin, P., Bardyszewski, W.

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Topological insulator with negative spin-orbit coupling and transition between Weyl and Dirac semimetals in InGaN-based quantum wells von Łepkowski, S. P., Bardyszewski, W.

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First-principles calculation of higher-order elastic constants using exact deformation-gradient tensors von Łepkowski, S. P.

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Anomalous composition dependence of the band gap pressure coefficients in In-containing nitride semiconductors von Gorczyca, I., Kamińska, A., Staszczak, G., Czernecki, R., Łepkowski, S. P., Suski, T., Schenk, H. P. D., Glauser, M., Butté, R., Carlin, J.-F., Feltin, E., Grandjean, N., Christensen, N. E., Svane, A.

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Magnetoconductance in InN/GaN quantum wells in topological insulator phase von Bardyszewski, W., Rodak, D., epkowski, S. P.

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Pressure dependence of elastic constants in zinc-blende GaN and InN and their influence on the pressure coefficients of the light emission in cubic InGaN/GaN quantum wells von Łepkowski, S.P., Majewski, J.A.

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Topological phase transition and evolution of edge states in In-rich InGaN/GaN quantum wells under hydrostatic pressure von epkowski, S P, Bardyszewski, W

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Piezoelectric field and its influence on the pressure behavior of the light emission from GaN/AlGaN strained quantum wells von Łepkowski, S. P., Teisseyre, H., Suski, T., Perlin, P., Grandjean, N., Massies, J.

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Deformation potentials in AlGaN and InGaN alloys and their impact on optical polarization properties of nitride quantum wells von Łepkowski, S. P., Gorczyca, I., Stefańska-Skrobas, K., Christensen, N. E., Svane, A.

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The electron effective mass at the bottom of the GaNAs conduction band von Skierbiszewski, C, Gorczyca, I, Łepkowski, S P, Łusakowski, J, Borysiuk, J, Toivonen, J

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Elastic properties of InGaN and InAlN from first-principles calculations von Łepkowski, S P, Gorczyca, I

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Light emission versus energy gap in group-III nitrides: hydrostatic pressure studies von Suski, T., Teisseyre, H., Łepkowski, S. P., Perlin, P., Mariette, H., Kitamura, T., Ishida, Y., Okumura, H., Chichibu, S. F.

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Anomalous temperature characteristics of single wide quantum well InGaN laser diode von Świetlik, T., Franssen, G., Wiśniewski, P., Krukowski, S., Łepkowski, S. P., Marona, L., Leszczyński, M., Prystawko, P., Grzegory, I., Suski, T., Porowski, S., Perlin, P., Czernecki, R., Bering-Staniszewska, A., Eliseev, P. G.

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Effect of electromechanical coupling on the pressure coefficient of light emission in group-III nitride quantum wells and superlattices von Łepkowski, S. P., Majewski, J. A.

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Polarization-Induced Band Inversion in In-Rich InGaN/GaN Quantum Wells von Łepkowski, S.P., Bardyszewski, W., Rodak, D.

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Optical anisotropy in [0001] oriented GaN/Al{sub x}Ga{sub 1−x}N quantum wells under pressure von Bardyszewski, W., Łepkowski, S. P.

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Pressure-Driven Reordering of Valence Band States in AlGaN/AlN Quantum Wells von Łepkowski, S.P., Bardyszewski, W.

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