Temperature-Dependent Electronic and Vibrational Structure of the 1-Ethyl-3-methylimidazolium Bis(trifluoromethylsulfonyl)amide Room-Temperature Ionic Liquid Surface:  A Study with... von Krischok, S, Eremtchenko, M, Himmerlich, M, Lorenz, P, Uhlig, J, Neumann, A, Öttking, R, Beenken, W. J. D, Höfft, O, Bahr, S, Kempter, V, Schaefer, J. A

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Single and Multiple Oxygen Vacancies in Ultrathin \hbox Gate Dielectric and Their Influence on the Leakage Current: An Ab Initio Investigation von Nadimi, E, Plänitz, P, Öttking, R, Schreiber, M, Radehaus, C

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Ab initio molecular dynamics simulation for structural transition of Zr during rapid quenching processes von Fang, H.Z., Hui, X., Chen, G.L., Öttking, R., Liu, Y.H., Schaefer, J.A., Liu, Z.K.

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Surface phonons of clean and hydrogen terminated Si(1 1 0) surfaces von Eremtchenko, M., Tautz, F.S., Öttking, R., Polyakov, V.M., Schwierz, F., Cherkashinin, G., Schaefer, J.A.

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Strong dispersion of the surface optical phonon of silicon carbide in the near vicinity of the surface Brillouin zone center von Balster, T., Tautz, F.S., Polyakov, V.M., Ibach, H., Sloboshanin, S., Öttking, R., Schaefer, J.A.

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Vibrational signature of oxygen on 6H–SiC(0 0 0 1) von Eremtchenko, M., Uhlig, J., Neumann, A., Öttking, R., Ahmed, S.I.-U., Schaefer, J.A.

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Surface phonons of clean, hydrogen- and deuterium-terminated Si(0 0 1) surfaces von Eremtchenko, M., Tautz, F.S., Öttking, R., Schaefer, J.A.

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Energy Renormalization and Damping of Long-Wavelength Phonons in Amorphous Solids von Handrich, K., Öttking, R.

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Self-Energy and Damping of Long-Wavelength Magnons in Amorphous Ferromagnets von Handrich, K., Öttking, R.

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Erratum to “Surface phonons of clean and hydrogen terminated Si(1 1 0) surfaces” [Surface Science 582 (2005) 159–172] von Eremtchenko, M., Tautz, F.S., Öttking, R., Polyakov, V.M., Schwierz, F., Cherkashinin, G., Schaefer, J.A.

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Single and Multiple Oxygen Vacancies in Ultrathin hbox SiO 2 Gate Dielectric and Their Influence on the Leakage Current: An Ab Initio Investigation von Nadimi, E, Planitz, P, Ottking, R, Schreiber, M, Radehaus, C

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Single and Multiple Oxygen Vacancies in Ultrathin [Formula Omitted] Gate Dielectric and Their Influence on the Leakage Current: An Ab Initio Investigation von Nadimi, E, Planitz, P, Ottking, R, Schreiber, M, Radehaus, C

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First Principle Calculation of the Leakage Current Through \hbox and \hbox\hbox Gate Dielectrics in MOSFETs von Nadimi, E., Planitz, P., Ottking, R., Wieczorek, K., Radehaus, C.

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