Electromechanical Piezoresistive Sensing in Suspended Graphene Membranes von Smith, A. D, Niklaus, F, Paussa, A, Vaziri, S, Fischer, A. C, Sterner, M, Forsberg, F, Delin, A, Esseni, D, Palestri, P, Östling, M, Lemme, M. C

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Pixel-based biosensor for enhanced control: silicon nanowires monolithically integrated with field-effect transistors in fully depleted silicon on insulator technology von Jayakumar, G, Östling, M

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Bilayer insulator tunnel barriers for graphene-based vertical hot-electron transistors von Vaziri, S, Belete, M, Dentoni Litta, E, Smith, A. D, Lupina, G, Lemme, M. C, Östling, M

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Utilizing the superior etch stop quality of HfO2 in the front end of line wafer scale integration of silicon nanowire biosensors von Jayakumar, G., Hellström, P.-E., Östling, M.

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Graphene transfer methods for the fabrication of membrane-based NEMS devices von Wagner, S., Weisenstein, C., Smith, A.D., Östling, M., Kataria, S., Lemme, M.C.

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New materials for post-Si computing von Liu, C.W., Östling, M., Hannon, J.B.

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Going ballistic: Graphene hot electron transistors von Vaziri, S., Smith, A.D., Östling, M., Lupina, G., Dabrowski, J., Lippert, G., Mehr, W., Driussi, F., Venica, S., Di Lecce, V., Gnudi, A., König, M., Ruhl, G., Belete, M., Lemme, M.C.

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Electro-optical effects of high aspect ratio P3HT nanofibers colloid in polymer micro-fluid cells von Lobov, G S, Marinins, A, Shafagh, R Zandi, Zhao, Y, van der Wijngaart, W, Wosinski, L, Thylen, L, Toprak, M S, Haraldsson, T, Östling, M, Popov, S

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Growth of GeSnSiC layers for photonic applications von Jamshidi, A., Noroozi, M., Moeen, M., Hallén, A., Hamawandi, B., Lu, J., Hultman, L., Östling, M., Radamson, H.

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Characterization of SiGe/Si multi-quantum wells for infrared sensing von Moeen, M., Salemi, A., Kolahdouz, M., Östling, M., Radamson, H. H.

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Improved designs of Si-based quantum wells and Schottky diodes for IR detection von Moeen, M., Kolahdouz, M., Salemi, A., Abedin, A., Östling, M., Radamson, H.H.

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4H-SiC pseudo-CMOS logic inverters for harsh environment electronics von Kuroki, S.-I, Kurose, T., Nagatsuma, H., Ishikawa, S., Maeda, T., Sezaki, H., Kikkawa, T., Makino, T., Ohshima, T., Östling, M., Zetterling, C.-M

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4H-SiC Trench pMOSFETs for High-Frequency CMOS Inverters von Kuroki, Shin Ichiro, Ohshima, Takeshi, Ishikawa, Seiji, Makino, Takahiro, Sezaki, Hiroshi, Östling, Mikael, Zetterling, Carl Mikael, Inoue, Jun, Maeda, Tomonori

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A refined polycide gate process with silicided diffusions for submicron MOS applications von NORSTROM, H, NYGREN, S, JOHANSSON, T, BUCHTA, R, OSTLING, M, LINDBERG, A, GUSTAFSSON, U, PETERSSON, C. A

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Sensitivity of the crystal quality of SiGe layers grown at low temperatures by trisilane and germane von Abedin, A., Moeen, M., Cappetta, C., Östling, M., Radamson, H.H.

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Process Conditions for Low Interface State Density in Si-passivated Ge Devices with TmSiO Interfacial Layer von urauskait, L., Hellström, P.-E., Östling, M.

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Large scale integration of graphene transistors for potential applications in the back end of the line von Smith, A.D., Vaziri, S., Rodriguez, S., Östling, M., Lemme, M.C.

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Atomic-layer deposited thulium oxide as a passivation layer on germanium von Mitrovic, I. Z., Hall, S., Althobaiti, M., Hesp, D., Dhanak, V. R., Santoni, A., Weerakkody, A. D., Sedghi, N., Chalker, P. R., Henkel, C., Dentoni Litta, E., Hellström, P.-E., Östling, M., Tan, H., Schamm-Chardon, S.

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Silicon nanowires integrated with CMOS circuits for biosensing application von Jayakumar, G., Asadollahi, A., Hellström, P.-E., Garidis, K., Östling, M.

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Removal of Crystal Orientation Effects on the Current Gain of 4H-SiC BJTs Using Surface Passivation von Ghandi, R, Buono, B, Zetterling, C.-M, Domeij, M, Shayestehaminzadeh, S, Östling, M

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