Geoffrey Donald Parbrook von Reid, Evelyn Parbrook, Alick

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Geoffrey Donald Parbrook von Parbrook, Evelyn, Reid, Alick

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Margaret Jean Parbrook von Parbrook, G., Morrison, D.

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Micro‐Light Emitting Diode: From Chips to Applications von Parbrook, Peter J., Corbett, Brian, Han, Jung, Seong, Tae‐Yeon, Amano, Hiroshi

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BAlGaN light‐emitting diode emitting at 350 nm von Milner, Peter, Zubialevich, Vitaly Z., O'Connor, Thomas, Singh, Sandeep M., Singh, Davinder, Corbett, Brian, Parbrook, Peter J.

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Doping of III-nitride materials von Pampili, Pietro, Parbrook, Peter J.

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The 2020 UV emitter roadmap von Amano, Hiroshi, Collazo, Ramón, Santi, Carlo De, Einfeldt, Sven, Funato, Mitsuru, Glaab, Johannes, Hagedorn, Sylvia, Hirano, Akira, Hirayama, Hideki, Ishii, Ryota, Kashima, Yukio, Kawakami, Yoichi, Kirste, Ronny, Kneissl, Michael, Martin, Robert, Mehnke, Frank, Meneghini, Matteo, Ougazzaden, Abdallah, Parbrook, Peter J, Rajan, Siddharth, Reddy, Pramod, Römer, Friedhard, Ruschel, Jan, Sarkar, Biplab, Scholz, Ferdinand, Schowalter, Leo J, Shields, Philip, Sitar, Zlatko, Sulmoni, Luca, Wang, Tao, Wernicke, Tim, Weyers, Markus, Witzigmann, Bernd, Wu, Yuh-Renn, Wunderer, Thomas, Zhang, Yuewei

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Geometrically Controlled Microscale Patterning and Epitaxial Lateral Overgrowth of Nitrogen-Polar GaN von Pampili, Pietro, Zubialevich, Vitaly Z., Parbrook, Peter J.

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GHz bandwidth semipolar (112¯2) InGaN/GaN light-emitting diodes von Dinh, Duc V, Quan, Zhiheng, Roycroft, Brendan, Parbrook, Peter J, Corbett, Brian

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Carrier dynamics near a crack in GaN microwires with AlGaN multiple quantum wells von Finot, Sylvain, Grenier, Vincent, Zubialevich, Vitaly, Bougerol, Catherine, Pampili, Pietro, Eymery, Joël, Parbrook, Peter J., Durand, Christophe, Jacopin, Gwénolé

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Surface Morphology Evolution of AlGaN Microhoneycomb Structures during Epitaxial Overgrowth von Singh, Sandeep M., Zubialevich, Vitaly Z., Parbrook, Peter J.

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Bandgap and refractive index estimates of InAlN and related nitrides across their full composition ranges von Alam, Shahab N., Zubialevich, Vitaly Z., Ghafary, Bijan, Parbrook, Peter J.

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Effect of V/III ratio on the growth of (112¯2) AlGaN by metalorganic vapour phase epitaxy von Dinh, Duc V., Alam, S.N., Parbrook, P.J.

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An enhanced surface passivation effect in InGaN/GaN disk-in-nanowire light emitting diodes for mitigating Shockley-Read-Hall recombination von Zhao, Chao, Ng, Tien Khee, Prabaswara, Aditya, Conroy, Michele, Jahangir, Shafat, Frost, Thomas, O'Connell, John, Holmes, Justin D, Parbrook, Peter J, Bhattacharya, Pallab, Ooi, Boon S

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Integration of O-band quantum dot lasers with AlGaN/GaN waveguides von O'Brien, Megan, Maraviglia, Nicola, Uzun, Ali, Arafat, Yeasir, Zubialevich, Vitaly, Genc, Muhammet, Li, Zhi, Roycroft, Brendan, O'Callaghan, James, Parbrook, Peter J, Corbett, Brian

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Epitaxial lateral overgrowth of AlN on self-assembled patterned nanorods von Conroy, Michele, Zubialevich, Vitaly Z, Li, Haoning, Petkov, Nikolay, Holmes, Justin D, Parbrook, Peter J

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InAlN-based LEDs emitting in the near-UV region von Pampili, Pietro, Zubialevich, Vitaly Z., Maaskant, Pleun, Akhter, Mahbub, Corbett, Brian, Parbrook, Peter J.

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Continuous‐Wave Operation of 457 nm InGaN Laser Diodes with Etched Facet Mirrors for On‐Chip Photonics von Genc, Muhammet, Zubialevich, Vitaly Z., Hazarika, Abhinandan, Parbrook, Peter J., Corbett, Brian, Li, Zhi

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A systematic comparison of polar and semipolar Si-doped AlGaN alloys with high AlN content von Spasevski, Lucia, Kusch, Gunnar, Pampili, Pietro, Zubialevich, Vitaly Z, Dinh, Duc V, Bruckbauer, Jochen, Edwards, Paul R, Parbrook, Peter J, Martin, Robert W

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Structural and optical properties of Ga auto-incorporated InAlN epilayers von Taylor, E., Smith, M.D., Sadler, T.C., Lorenz, K., Li, H.N., Alves, E., Parbrook, P.J., Martin, R.W.

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