Relaxation of Misfit-Induced Strain in Semiconductor Heterostructures von Strunk, H. P., Albrecht, M., Christiansen, S., Dorsch, W., Hörmann, U., Jahnen, B., Remmel, T.

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Indium distribution in epitaxially grown InGaN layers analyzed by transmission electron microscopy von Gerthsen, D., Hahn, E., Neubauer, B., Potin, V., Rosenauer, A., Schowalter, M.

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Relaxation Processes of AlGaN/GaN Heterostructures Grown onto Single Crystal GaN(0001) Substrates von Christiansen, S. H., Albrecht, M., Strunk, H. P., Foxon, C. T., Korakakis, D., Grzegory, I., Porowski, S.

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