Editor’s note: “Impurity incorporation in epitaxially laterally overgrown GaN detected by cryogenic photoluminescence microscope with sub-micron spatial resolution” (Journal of Crystal Growth, Volumes 237–239, Part 2, April 2002, Pages 1075-1078) [https://doi.org/10.1016/S0022-0248(01)02139-X] von Derby, Jeffrey

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Preface to special issue «Crystallization: Computer Models and Experiment» of the Journal of Crystal Growth von Krivilyov, Mikhail D., Kharanzhevskiy, Evgeny V.

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Retraction notice to “Growth behavior and microstructure evolution of ZnO nanorods grown on Si in aqueous solution” [Journal of Crystal Growth, 274/3-4 (2004) 438-446] von Liou, Sz-Chian, Hsiao, Chi-Sheng, Chen, San-Yuan

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Retraction notice to “High quality N-polar GaN two-dimensional growth on c-plane sapphire by metalorganic vapor phase epitaxy” [Journal of Crystal Growth, 366 (2013) 35-38] von Zhang, Yuantao, Dong, Xin, Li, Guoxing, Li, Wancheng, Zhang, Baolin, Du, Guotong

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Retraction notice to “Interactions between planar defects in bulk 3C-SiC” [Journal of Crystal Growth, 389 (2014) 108-111] von Ikebe, Yohei, Nagasawa, Hiroyuki, Hatta, Naoki, Kawahara, Takamitsu, Yagi, Kuniaki

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Retraction notice to “Nucleation and growth behavior of well-aligned ZnO nanorods onorganic substrates in aqueous solutions” [Journal of Crystal Growth, 283/1-2 (2005) 141-146] von Lin, Chin-Ching, Chen, San-Yuan, Cheng, Syh-Yuh

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Erratum to “Selective crystal growth of polymorphs and crystal-to-crystal thermal phase transition of non-peripherally alkyl-substituted phthalocyanine and tetrabenzotriazaporphyrin” [Journal of Crystal Growth 468(2017)804–809] von Ohmori, Masashi, Nakano, Chika, Fujii, Akihiko, Shimizu, Yo, Ozaki, Masanori

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Expression of concern:Influence of GaAs/InAs quasi-monolayer on the structural and optical properties of InAs/GaAs quantum dots, Jae-Young Leem, Minhyun Jeon, Jewon Lee, Guansik Cho, Cheul-Ro Lee, Jong Su Kim, Se-Kyung Kang, S.I. Ban, J.I. Lee, Hyung Koun Cho, Journal of Crystal Growth, Volume 252, Issue 4, May 2003, Pages 493–498 von Derby, Jeffrey J.

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Corrigendum to “Syntheses and structural Characterizations of CrSi2 Nanostructures using Si Substrates under CrCl2 vapor” [Journal of Crystal Growth, doi: 10.1016/j.jcrysgro.2012.12.031] von Li, Wen, Meng, Erchao, Matsushita, Tomoji, Oda, Shingo, Ishikawa, Daisuke, Nakane, Kaito, Hu, Junhua, Guan, Shaokang, Ishida, Akihiro, Tatsuoka, Hirokazu

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Corrigendum to “Vapor-phase epitaxial growth of GaN films using Ga2O vapor and NH3” [Journal of Crystal Growth 350 (2012) 56–59] von Imade, Mamoru, Bu, Yuan, Sumi, Tomoaki, Kitamoto, Akira, Yoshimura, Masashi, Sasaki, Takatomo, Isemura, Masashi, Mori, Yusuke

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Erratum to: “The effect of solvent ratio and water on the growth of C60 nanowhiskers” [Journal of Crystal Growth 312 (2010) 2764–2770] von Miyazawa, Kun'ichi, Hotta, Kayoko

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Corrigendum to “The annealing effects of V-doped GaN thin films grown by MOCVD” [Journal of Crystal Growth 340 (2012) 47–50] von Souissi, M., Bouzidi, M., El Jani, B.

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Erratum to “Nucleation kinetics, micro-crystallization and surface morphology studies of the nonlinear optical single crystal l-lysinium trifluoroacetate” [Journal of Crystal Growth] 311/13 (2009) von Sun, Z.H., Zhang, G.H., Wang, X.Q., Yu, G., Zhu, L.Y., Fan, H.L., Xu, D.

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“Formation processes of zinc-oxide nanoparticles by ion implantation combined with thermal oxidation” [Journal of Crystal Growth 287 (2006) 2–6] von Amekura, H., Umeda, N., Yoshitake, M., Kono, K., Kishimoto, N., Buchal, Ch

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Intrinsic point defects and grown-in microdefects in silicon crystals—comment on: “Intrinsic point defect behaviour in silicon crystals during growth from the melt: A model derived from experimental results”, T. Abe, T. Takahashi, Journal of Crystal Growth 334 (2011) 16 von Voronkov, V.V., Falster, R.

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Comment on the paper by C. Justin Raj, S. Jerome Das, “Growth and characterization of nonlinear optical active l-alanine formate crystal by modified Sankaranarayanan-Ramasamy (SR) method” : [Journal of Crystal Growth 304 (2007) 191–195] von Petrosyan, A.M.

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Erratum to “Effect of power arrangement on the crystal shape during the Kyropoulos sapphire crystal growth process” [J Cryst Growth, In press, corrected proof, Available online 24 January 2012] von Chen, Chun-Hung, Chen, Jyh-Chen, Lu, Chung-Wei, Liu, Che-Ming

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The combined effects of shear and buoyancy on phase boundary stability von Toppaladoddi, S., Wettlaufer, J. S.

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Comment on: Jun Dong and Peizhen Deng, “Ti:sapphire crystal used in ultrafast lasers and amplifiers”, Journal of Crystal Growth 261 (2004) 514–519 von Khattak, Chandra P., Joyce, David B.

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Journal of Crystal Growth von Lidbaum Hans , Uppsala universitet, Experimentell fysik, Raanaei Hossein , Uppsala universitet, Materialfysik, Papaioannou Evangelos , Uppsala universitet, Materialfysik, Leifer Klaus , Uppsala universitet, Experimentell fysik, Hjörvarsson Björgvin , Uppsala universitet, Materialfysik, Raanaei Hossein, Uppsala University, Materials physics, Papaioannou Evangelos, University of Uppsala, physics of materials

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