Diffusion and defect data edited by F. H. Wöhlbier von Lowe, I.

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Oxygen Diffusion in Single-Crystal Zinc Oxide von Tomlins, Gregory W., Routbort, Jules L., Mason, Thomas O.

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P-Type Impurities in 4H-SiC Calculated Using Density Functional Theory von Weger, Magdalena, Pobegen, Gregor, Smith, Niamh, Shluger, Alexander L.

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Evaluation of Strain in 3C-SiC/Si Epiwafers from X-Ray Diffraction Measurements von Bussel, Marc, Mank, Hugues, Cordier, Yvon, Zielinski, Marcin, Portail, Marc, Scuderi, Viviana, La Via, Francesco, Monnoye, Sylvain, Michon, Adrien

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Strain-Dependent Photoluminescence Line Shifts of the TS Color Center in 4H-SiС von Weber, Heiko B., Bornträger, Titus, Fuchs, Alexander, Lehmeyer, Johannes A.F., Krieger, Michael, Popp, Matthias

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Investigation of Defect Generation and Propagation in Electrically and Photonically Stressed Silicon Carbide von Chen, Ze Yu, Hu, Shanshan, Sampayan, Stephen, Watson, James, Raghothamachar, Balaji, Peng, Hong Yu, Dudley, Michael, Sampayan, Kristin, Liu, Yafei, Cheng, Qian Yu

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Statistical Model of Hydrogen Diffusion in BCC Metals von Odqvist, Joakim, Bobyr, Serhii

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The Optical Properties of the Carbon Di-Vacancy-Antisite Complex in the Light of the TS Photoluminescence Center von Weber, Heiko B., Lehmeyer, Johannes A.F., Jungwirth, Nicolas, Schober, Maximilian, Krieger, Michael, Kobayashi, Takuma, Bockstedte, Michel

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Analysis of Basal Plane Dislocation Motion Induced by p+ Ion Implantation Using Synchrotron X-Ray Topography von Mancini, Stephen A., Jang, Seung Yup, Chen, Ze Yu, Raghothamachar, Balaji, Dudley, Michael, Hu, Shanshan, Sung, Woong Je, Peng, Hong Yu, Liu, Yafei, Cheng, Qian Yu

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Analysis of Strain in Ion Implanted 4H-SiC by Fringes Observed in Synchrotron X-Ray Topography von Chen, Ze Yu, Raghothamachar, Balaji, Dudley, Michael, Hu, Shanshan, Thieberger, Peter, Peng, Hong Yu, Kennerly, Stacey, Liu, Yafei, Cheng, Qian Yu, Ghandi, Reza

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Effective Penetration Depth Investigation for Frank Type Dislocation (Deflected TSDs/TMDs) on Grazing Incidence Synchrotron X-Ray Topographs of 4H-SiC Wafers von Chen, Ze Yu, Raghothamachar, Balaji, Dudley, Michael, Hu, Shanshan, Peng, Hong Yu, Cheng, Qian Yu, Liu, Yafei

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Correlation of Extended Defects with Electrical Yield of SiC MOSFET Devices von Baierhofer, Daniel, Staiger, F., Förster, C., Erlbacher, Tobias, Thomas, Bernd, Marchetti, B.

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Minority Carrier Traps Induced by Neutron Reactions with 4H-SiC von Martinella, Corinna, Dorfer, Christian, Kumar, Piyush, Bathen, Marianne Etzelmüller, Grossner, Ulrike, Belanche Guadas, Manuel

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Stacking Faults Originating from Star-Defects in 4H-SiC von Odekirk, Bruce, Johnston, Steven, Gorman, Brian, Soto, Jake, Mahadik, Nadeem, Guthrey, Harvey, El Hageali, Sami, Stahlbush, Robert, Al-Jassim, Mowafak

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Implementation of Large Scale Deep Learning Non-Destructive Methods for Characterizing 4H-SiC Materials von Witry, Jason, Balkas, Elif, Conrad, Matthew, van Brunt, Edward, Leonard, Robert

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S-EVC Method for Sorting Wafers with Defects that Extend to Bar Shaped SSFs von Takano, Kazumi, Matsushita, Yohsuke, Igarashi, Yasuyuki

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Charge State Control over Point Defects in Sic Devices von Enga, Marius Johan, Grossner, Ulrike, Kjeldby, Snorre B., Bathen, Marianne Etzelmüller, Müting, Johanna, Vines, Lasse, Selnesaunet, Gard M.

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Study of Defects in 4H-SiC Epitaxy at Various Buffer Layer Growth Conditions von Chung, Gil, Wu, Jun, Gave, Matthew, Rana, Tawhid, Moeggenborg, Kevin

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The Development of the Advanced Inspection System to Screen out the BPDs that Extend to Bar Shaped SSFs under Forward Biasing von Takano, Kazumi, Igarashi, Yasuyuki, Matsushita, Yohsuke, Shibata, Chiyomi

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Basal Plane Dislocation Slip Band Characterization and Epitaxial Propagation in 4H SiC von Chung, Gil, Soukhojak, Andrey, Dudley, Michael, Viveros, Robert, Lee, Charles, Cheng, Qian Yu, Pushkarev, Vladimir, Raghothamachar, Balaji

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