In situ bow reduction during sublimation growth of cubic silicon carbide von Kollmuß, Manuel, Mauceri, Marco, Roder, Melissa, La Via, Francesco, Wellmann, Peter J.

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Analysis of the basal plane dislocation density and thermomechanical stress during 100 mm PVT growth of 4H-SiC von Steiner, Johannes, Roder, Melissa, Nguyen, Binh Duong, Sandfeld, Stefan, Danilewsky, Andreas N., Wellmann, Peter 1966-

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